A global crew of researchers has made a ground-breaking discovery that opens the door to developments in neuromorphic computing and ultrahigh-density information storage: room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires. This discovery was printed in Nature Communications.
This research supplies the primary experimental affirmation of ferroelectricity in Te nanowires, a single-element materials that was beforehand solely anticipated in theoretical fashions.
Ferroelectric supplies are substances that may retailer electrical cost and hold it even when the ability is turned off, and their cost may be switched by making use of an exterior electrical area – a attribute important for non-volatile reminiscence purposes.
Yong P. Chen, Examine Co-Corresponding Writer and Principal Investigator, Tohoku College
Yong P. Chen can be a Professor at Purdue and Aarhus Universities.
Ferroelectricity is often present in compounds, however single-element supplies like tellurium (Te) hardly ever exhibit this property because of their symmetric atomic constructions.
Nonetheless, Chen and his crew demonstrated that Te nanowires exhibit robust ferroelectric traits at room temperature because of the distinctive atomic displacement of their one-dimensional chain construction. They found this utilizing piezoresponse power microscopy (PFM) and high-resolution scanning transmission electron microscopy.
Constructing on this discovering, the group created a novel system known as a self-gated ferroelectric field-effect transistor (SF-FET), which mixes semiconducting and ferroelectric traits into one unit.
The SF-FET has a exceptional storage density of greater than 1.9 terabytes per sq. centimeter, quick switching speeds of lower than 20 nanoseconds, and excellent information retention.
Our breakthrough opens up new alternatives for next-generation reminiscence units, the place Te nanowires’ excessive mobility and distinctive digital properties might assist simplify system architectures. Our SF-FET system might additionally play a vital function in future synthetic intelligence programs, enabling neuromorphic computing that mimics human mind operate. Moreover, the findings can assist result in decrease energy consumption in digital units, addressing the necessity for sustainable expertise.
Yaping Qi, Examine Co-First Writer and Assistant Professor, Superior Institute for Supplies Analysis, Tohoku College
The crew at AIMR, together with Qi and Chen, is collaborating with Professor Hao Li’s group to discover new 2D ferroelectric supplies utilizing synthetic intelligence (AI) methods. This analysis could result in the invention of extra supplies with promising ferroelectric properties or potential purposes past reminiscence storage, corresponding to neuromorphic computing.
Journal Reference:
Zhang, J., et al. (2024) Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires. Nature Communications. doi.org/10.1038/s41467-024-52062-6.
