Researchers develop high-performance heterojunction pn diodes

A analysis group has developed high-performance diamond/ε-Ga₂O₃ heterojunction pn diodes based mostly on ultrawide bandgap semiconductors, reaching breakdown voltages exceeding 3 kV. This work was revealed in Nano Letters.

The analysis was led by Prof. Ye Jichun from the Ningbo Institute of Supplies Know-how and Engineering (NIMTE) of the Chinese language Academy of Sciences (CAS), along with researchers from Zhengzhou College, Nanjing College, Harbin Institute of Know-how, and Yongjiang Laboratory.

Ultrawide bandgap semiconductors together with Ga₂O₃ and diamond display notable potential for high-power purposes as a consequence of their ultrawide bandgap, excessive breakdown subject, radiation resistance, and provider mobility. Bipolar gadgets, resembling pn diodes and bipolar junction transistors, maintain promising potential within the high-power electronics business as a consequence of their capacity to face up to reverse voltage currents.

Nevertheless, efficient bipolar doping in ultrawide bandgap semiconductors is restricted by the substantial ionization energies of dopants. To beat this bottleneck, the researchers have proposed a heterojunction technique. This strategy integrates p-type diamond with n-type ε-Ga₂O₃ for fabricating energy pn diodes.

The heteroepitaxial n-type ε-Ga₂O₃ movie was grown on the p-type diamond single-crystal substrate by coordinating multi-domains and confining the crystallization pathway. This course of alleviates lattice mismatch. The heterojunction interface between ε-Ga₂O₃ and diamond is atomically sharp with out observable interfacial ingredient diffusion, enabling extremely environment friendly rectification and low reverse leakage present within the heterojunction diodes.

In contrast with beforehand reported diamond-based diodes, the fabricated diamond/ε-Ga₂O₃ heterojunction diode reveals notable rectifying traits, with an on−off ratio exceeding 10⁸. It achieves a most breakdown voltage surpassing 3,000 V, even with out edge termination.

Moreover, a thermal boundary conductance of as much as 64 MW/m²·Okay at 500 Okay was achieved, demonstrating the thermal administration functionality of the diamond/ε-Ga₂O₃ heterojunction diode.

This examine introduces an revolutionary methodology for fabricating high-performance ultrawide bandgap semiconductor-based bipolar gadgets. The ensuing gadgets display distinctive breakdown voltages and environment friendly thermal administration, making them extremely appropriate for ultra-high-power purposes.