Launch, S. P. Samsung reveals eMRAM and BCD roadmap whereas pushing automotive chip right down to 2 nm. https://www.digitimes.com/information/a20231020PD215/automotive-ic-ev-memory-chips-samsung.html (2023).
Parkin, S. S. P. et al. Big tunnelling magnetoresistance at room temperature with MgO (100) tunnel obstacles. Nat. Mater. 3, 862 (2004).
Yuasa, S., Nagahama, T., Fukushima, A., Suzuki, Y. & Ando, Ok. Big room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions. Nat. Mater. 3, 868 (2004).
Mangin, S. et al. Present-induced magnetization reversal in nanopillars with perpendicular anisotropy. Nat. Mater. 5, 210 (2006).
Meng, H. & Wang, J.-P. Spin switch in nanomagnetic units with perpendicular anisotropy. Appl. Phys. Lett. 88, 172506 (2006).
Worledge, D. et al. Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions. Appl. Phys. Lett. 98, 022501 (2011).
Ikeda, S. et al. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction. Nat. Mater. 9, 721–724 (2010).
Solar, J. Z. Spin-current interplay with a monodomain magnetic physique: a mannequin examine. Phys. Rev. B 62, 570–578 (2000).
Yamada, Ok., Oomaru, Ok., Nakamura, S., Sato, T. & Nakatani, Y. Lowering the switching present with a Gilbert damping fixed in nanomagnets with perpendicular anisotropy. Appl. Phys. Lett. 106, 042402 (2015).
Takeuchi, Y. et al. Nanometer-thin L10-MnAl movie with B2-CoAl underlayer for high-speed and high-density STT-MRAM: construction and magnetic properties. Appl. Phys. Lett. 120, 052404 (2022).
Belmeguenai, M. et al. Alternate stiffness and damping constants in diluted CoxFeyB1−x−y skinny movies. J. Phys. D 50, 415003 (2017).
Aharoni, A. Introduction to the Concept of Ferromagnetism (Oxford Univ. Press, 2001).
Sala, G. & Gambardella, P. Ferrimagnetic dynamics induced by spin-orbit torques. Adv. Mater. Int. 9, 2201622 (2022).
Kim, S. Ok. et al. Ferrimagnetic spintronics. Nat. Mater. 21, 24–34 (2022).
Hansen, P., Clausen, C., A lot, G., Rosenkranz, M. & Witter, Ok. Magnetic and magneto-optical properties of rare-earth transition-metal alloys containing Gd, Tb, Fe, Co. J. Appl. Phys. 66, 756–767 (1989).
Wang, Y. J. & Leng, Q. W. Thermal stability and the origin of perpendicular anisotropy in amorphous Tb-Fe-Co movies. Phys. Rev. B 41, 651–657 (1990).
Wang, Ok., Tang, Y., Zhang, Ok., Wang, Y. & Liu, J. Thermal degradation conduct of amorphous GdFeCo alloy movies with perpendicular anisotropy. Mater. Sci. Eng. B 263, 114848 (2021).
Krén, E. & Kádár, G. Neutron diffraction examine of Mn3Ga. Stable State Commun. 8, 1653–1655 (1970).
Kádár, G. & Krén, E. Neutron diffraction examine of Mn3Ge. Int. J. Magn. 1, 143–148 (1971).
Faleev, S. V. et al. Origin of the tetragonal floor state of Heusler compounds. Phys. Rev. A 7, 034022 (2017).
Hirohata, A., Frost, W., Samiepour, M. & Kim, J.-Y. Perpendicular magnetic anisotropy in Heusler alloy movies and their magnetoresistive junctions. Supplies 11, 105 (2018).
Jeong, J. et al. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with excessive perpendicular magnetic anisotropy. Nat. Commun. 7, 10276 (2016).
Graf, T., Felser, C. & Parkin, S. S. P. Easy guidelines for the understanding of Heusler compounds. Prog. Stable State Chem. 39, 1–50 (2011).
Faleev, S. V. et al. Heusler compounds with perpendicular magnetic anisotropy and huge tunneling magnetoresistance. Phys. Rev. Mater. 1, 024402 (2017).
Sugihara, A., Suzuki, Ok., Miyazaki, T. & Mizukami, S. Tunnel magnetoresistance in full-epitaxial magnetic tunnel junctions with a high electrode consisting of a perpendicularly magnetized D022-Mn3Ge movie. Jpn. J. Appl. Phys. 54, 078002 (2015).
Kurt, H. et al. Magnetic and digital properties of D022-Mn3Ge (001) movies. Appl. Phys. Lett. 101, 132410 (2012).
Thomas, L. et al. STT-MRAM units with low damping and second optimized for LLC purposes at 0x nodes. In 2018 IEEE Worldwide Electron Units Assembly (IEDM) 27.3.1–27.3.4 (IEEE, 2018).
Hu, G. et al. Spin-transfer torque MRAM with dependable 2 ns writing for final stage cache purposes. In 2019 IEEE Worldwide Electron Units Assembly (IEDM) 2.6.1–2.6.4 (IEEE, 2019).
Filippou, P. C. et al. Chiral area wall movement in unit-cell thick perpendicularly magnetized Heusler movies ready by chemical templating. Nat. Commun. 9, 4653 (2018).
Filippou, P. C. et al. Heusler-based artificial antiferrimagnets. Sci. Adv. 8, eabg2469 (2022).
Parkin, S. S. P., Extra, N. & Roche, Ok. P. Oscillations in alternate coupling and magnetoresistance in metallic superlattice constructions: Co/Ru, Co/Cr and Fe/Cr. Phys. Rev. Lett. 64, 2304–2307 (1990).
Parkin, S. S. P. & Mauri, D. Spin-engineering: direct dedication of the RKKY far subject vary perform in ruthenium. Phys. Rev. B 44, 7131 (1991).
Solar, J. Z. et al. Impact of subvolume excitation and spin-torque effectivity on magnetic switching. Phys. Rev. B 84, 064413 (2011).
Thomas, L. et al. Fixing the paradox of the inconsistent measurement dependence of thermal stability at system and chip-level in perpendicular STT-MRAM. In 2015 IEEE Worldwide Electron Units Assembly (IEDM) 26.4.1–26.4.4 (IEEE, 2015).
Koch, R. H., Katine, J. A. & Solar, J. Z. Time-resolved reversal of spin-transfer switching in a nanomagnet. Phys. Rev. Lett. 92, 088302 (2004).
Li, Z. & Zhang, S. Thermally assisted magnetization reversal within the presence of a spin-transfer torque. Phys. Rev. B 69, 134416 (2004).
Bedau, D. et al. Spin-transfer pulse switching: from the dynamic to the thermally activated regime. Appl. Phys. Lett. 97, 262502 (2010).
Slonczewski, J. C. Currents, torques, and polarization components in magnetic tunnel junctions. Phys. Rev. B 71, 024411 (2005).
Solar, J. Z. Spin-transfer torque switched magnetic tunnel junctions in magnetic random entry reminiscence. Proc. SPIE https://doi.org/10.1117/12.2238712 (2016).
Sato, H. et al. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording construction. Appl. Phys. Lett. https://doi.org/10.1063/1.4736727 (2012).
Konoto, M. et al. Impact of MgO cap layer on Gilbert damping of FeB electrode layer in MgO-based magnetic tunnel junctions. Appl. Phys. Categorical 6, 073002 (2013).
Hu, G. et al. STT-MRAM with double magnetic tunnel junctions. In 2015 IEEE Worldwide Electron Units Assembly (IEDM) 26.3.1–26.3.4 (IEEE, 2015).
Mizukami, S. et al. Laser-induced THz magnetization precession for a tetragonal Heusler-like almost compensated ferrimagnet. Appl. Phys. Lett. 108, 012404 (2016).
Sato, H. et al. Junction measurement impact on switching present and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions. Appl. Phys. Lett. 99, 042501 (2011).
Rehm, L., Wolf, G., Kardasz, B., Pinarbasi, M. & Kent, A. D. Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures. Appl. Phys. Lett. 115, 182404 (2019).
