Tellurium nanowires present potential for room-temperature ferroelectricity and knowledge storage

A discovery by a global crew of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the best way for developments in ultrahigh-density knowledge storage and neuromorphic computing.

Printed in Nature Communications, this analysis marks the first experimental proof of ferroelectricity in Te nanowires, a single-element materials, which was beforehand predicted solely in theoretical fashions.

“Ferroelectric supplies are substances that may retailer electrical cost and preserve it even when the ability is turned off, and their cost may be switched by making use of an exterior electrical subject—a attribute important for non-volatile reminiscence functions,” factors out co-corresponding writer of the paper Professor Yong P. Chen, a principal investigator at Tohoku College’s Superior Institute for Supplies Analysis (AIMR) and a professor at Purdue and Aarhus Universities.

Whereas ferroelectricity is widespread in compounds, single-element supplies like Te hardly ever exhibit this habits on account of their symmetric atomic constructions.

Nonetheless, Chen and his colleagues demonstrated that Te nanowires exhibit strong ferroelectric properties at room temperature, because of the distinctive atomic displacement inside their one-dimensional chain construction. The invention was made utilizing piezoresponse pressure microscopy (PFM) and high-resolution scanning transmission electron microscopy.

Constructing on this discovery, the crew developed a novel system—a self-gated ferroelectric field-effect transistor (SF-FET)—which integrates each ferroelectric and semiconducting properties in a single system. The SF-FET demonstrates distinctive knowledge retention, quick switching speeds of lower than 20 nanoseconds, and a formidable storage density exceeding 1.9 terabytes per sq. centimeter.

“Our breakthrough opens up new alternatives for next-generation reminiscence units, the place Te nanowires’ excessive mobility and distinctive digital properties may assist simplify system architectures,” says Yaping Qi, an assistant professor at AIMR and co-first writer of the research.

“Our SF-FET system may additionally play an important function in future synthetic intelligence methods, enabling neuromorphic computing that mimics human mind perform. Moreover, the findings can assist result in decrease energy consumption in digital units, addressing the necessity for sustainable know-how.”

Presently, the crew at AIMR, which contains Qi and Chen, is exploring new 2D, ferroelectric supplies utilizing synthetic intelligence (AI) methods, in collaboration with Professor Hao Li’s group. This might result in the invention of extra supplies with promising ferroelectric properties or additional functions past reminiscence storage, equivalent to neuromorphic computing.